SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLS6G2731-120 is a 120 W LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 3.1 GHz. It utilizes a flanged ceramic package (SOT502A) with two mounting holes and two leads. The device operates at a supply voltage of 32 V, delivering an output power of 120 W with a typical power gain of 13.5 dB and drain efficiency of 48% under pulsed RF conditions (tp = 100 µs; δ = 10%). Key electrical parameters include a drain-source breakdown voltage of 60 V, a maximum drain current of 33 A, and a junction temperature rating up to 225 °C.
Verify the specific package variant required for the design, as the BLS6G2731-120 corresponds to the SOT502A flanged ceramic package with mounting holes. Confirm that the application environment supports the specified thermal management requirements, particularly the transient thermal impedance characteristics under pulsed operation. Ensure compliance with RoHS directives if applicable to the final assembly.
Select this component for high-power S-band radar transmitters requiring robust performance in class-AB pulsed modes. Consider the internal matching network which simplifies circuit design compared to unmatched devices. Evaluate the thermal interface capabilities to ensure the mounting base can effectively dissipate heat during high-duty cycle operations while maintaining junction temperatures within safe limits.
This part belongs to Ampleon's LDMOS S-band radar power transistor portfolio. It shares functional similarities with the BLS6G2731S-120, which uses the earless SOT502B package. Both variants target the same frequency band and power levels but differ in mechanical mounting configurations suitable for different chassis integration needs.
The BLS6G2731S-120 serves as a direct alternative when an earless flanged ceramic package (SOT502B) is preferred over the standard flanged version (SOT502A). Electrical specifications remain consistent between these two package options.