BLS6G2731-120,112

BLS6G2731-120,112

$185.84
  • Description:RF MOSFET LDMOS 32V SOT502A
  • Series:-

SKU:1ec509da876e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.7GHz ~ 3.1GHz
  • Gain:13.5dB
  • Voltage - Test:32 V
  • Current Rating (Amps):33A
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:120W
  • Voltage - Rated:60 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLS6G2731-120,112

Overview

The BLS6G2731-120 is a 120 W LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 3.1 GHz. It utilizes a flanged ceramic package (SOT502A) with two mounting holes and two leads. The device operates at a supply voltage of 32 V, delivering an output power of 120 W with a typical power gain of 13.5 dB and drain efficiency of 48% under pulsed RF conditions (tp = 100 µs; δ = 10%). Key electrical parameters include a drain-source breakdown voltage of 60 V, a maximum drain current of 33 A, and a junction temperature rating up to 225 °C.

Feature Summary

  • Internally matched for ease of use
  • High flexibility regarding pulse formats
  • Excellent ruggedness in class-AB operation
  • Integrated ESD protection

Applications

  • S-band power amplifiers for radar applications
  • Broadband radar systems in the 2.7 GHz to 3.1 GHz range

Procurement Notes

Verify the specific package variant required for the design, as the BLS6G2731-120 corresponds to the SOT502A flanged ceramic package with mounting holes. Confirm that the application environment supports the specified thermal management requirements, particularly the transient thermal impedance characteristics under pulsed operation. Ensure compliance with RoHS directives if applicable to the final assembly.

Selection Notes

Select this component for high-power S-band radar transmitters requiring robust performance in class-AB pulsed modes. Consider the internal matching network which simplifies circuit design compared to unmatched devices. Evaluate the thermal interface capabilities to ensure the mounting base can effectively dissipate heat during high-duty cycle operations while maintaining junction temperatures within safe limits.

Part Context

This part belongs to Ampleon's LDMOS S-band radar power transistor portfolio. It shares functional similarities with the BLS6G2731S-120, which uses the earless SOT502B package. Both variants target the same frequency band and power levels but differ in mechanical mounting configurations suitable for different chassis integration needs.

Replacement Considerations

The BLS6G2731S-120 serves as a direct alternative when an earless flanged ceramic package (SOT502B) is preferred over the standard flanged version (SOT502A). Electrical specifications remain consistent between these two package options.

BLS6G2731-120,112BLS6G2731-120,112
$185.84
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