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The BLS6G2731P-200,117 is an N-channel LDMOS RF power transistor manufactured by Ampleon. It operates within the 2.7 GHz to 3.1 GHz frequency range with a drain-source breakdown voltage of 32 V and a typical on-resistance of 30 mOhms. The device provides a power gain of 13 dB and delivers an output power of 200 W. It features a gate-source voltage range of -6 V to +13 V and a threshold voltage of 2.5 V. Packaged in SOM038, it supports screw mounting and functions at maximum operating temperatures up to +225°C.
Verify export compliance requirements before procurement, as this product may require additional documentation for shipment from the United States. Confirm that the SOM038 package aligns with your thermal management strategy. Ensure gate drive circuits accommodate the specified voltage limits. Validate that the target application frequency falls within the 2.7 GHz to 3.1 GHz operational range for optimal performance.
Select this component when a 32 V supply system requires 200 W output power in the S-band. Compare against higher voltage variants if system architecture demands greater headroom. Consider the SOM038 footprint constraints during PCB layout. Evaluate thermal resistance requirements against the +225°C maximum junction temperature specification to ensure adequate cooling solutions are implemented.
This part belongs to Ampleon's BLS series of single-ended LDMOS transistors designed for broadband applications. It complements other devices like the BLS6G2731-120, which offers lower power output but similar voltage characteristics. The series targets cost-effective solutions for industrial and broadcast sectors requiring stable RF power generation without complex matching networks.
The BLS6G2731-120 serves as a lower-power alternative within the same family. Verify pinout compatibility and thermal interface dimensions when substituting. Ensure the replacement meets the specific 200 W output requirement if power levels cannot be reduced.