BLS6G2731S-120,112

Overview

The BLS6G2731S-120 is an LDMOS S-band radar power transistor manufactured by Ampleon. It delivers a typical output power of 120 W with a drain efficiency of 48% and power gain of 13.5 dB at frequencies between 2.7 GHz and 3.1 GHz. The device operates at a supply voltage of 32 V with a quiescent current of 100 mA. Key electrical parameters include a drain-source breakdown voltage of 60 V, a maximum drain current of 33 A, and a junction temperature rating up to 225 °C. It utilizes the SOT502B earless flanged ceramic package.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Excellent ruggedness against load mismatch
• High thermal stability

Applications

• S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range

Procurement Notes

Verify the specific ordering suffix '112' against the manufacturer's official documentation to confirm compliance with Directive 2002/95/EC regarding restriction of hazardous substances (RoHS). Ensure that the procurement channel provides valid traceability for this sensitive semiconductor component.

Selection Notes

Select the BLS6G2731S-120 variant when an earless flanged SOT502B package is required instead of the standard flanged SOT502A version. Confirm that the application design accommodates the specified pulsed RF operation conditions, including the 100 µs pulse width and 10% duty cycle, to achieve the rated performance metrics.

Part Context

This component belongs to the BLS6G2731 series of LDMOS power transistors designed specifically for high-power radar systems. The 'S' designation indicates the SOT502B earless flanged package configuration, distinguishing it from the standard flanged SOT502A package found in the BLS6G2731-120 model.

Replacement Considerations

The BLS6G2731-120 serves as a direct functional substitute within the same product family, differing only in the physical package type (SOT502A versus SOT502B).