BLS6G2735L-30,112

Overview

The BLS6G2735L-30 is a 30 W LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 3.5 GHz. It utilizes a flanged ceramic package (SOT1135A) with two mounting holes and two leads. The device features an integrated ESD protection circuit, excellent ruggedness capable of withstanding VSWR = 10:1 through all phases, and high efficiency. Typical RF performance at Tcase = 25 °C includes a drain efficiency of 43% to 50%, power gain of 11 dB to 13 dB, and output power of 30 W under pulsed conditions (tp = 300 µs; δ = 10%).

Feature Summary

• Integrated ESD protection for enhanced reliability.
• Excellent ruggedness supporting VSWR = 10:1 mismatch conditions.
• High efficiency and thermal stability for broadband operation.

Applications

• S-band radar systems in the 2.7 GHz to 3.5 GHz frequency range.

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status and check for any recent datasheet revisions that may impact design parameters or handling requirements before finalizing procurement specifications.

Selection Notes

Select this component for S-band radar designs requiring 30 W output power within the 2.7 GHz to 3.5 GHz band. Ensure the application circuit supports the required pulsed RF conditions and thermal management for the flanged ceramic package. Verify impedance matching networks align with the provided typical source and load impedances for optimal performance.

Part Context

This part belongs to the BLS6G series of S-band LDMOS transistors manufactured by Ampleon. It shares functional similarities with the BLS6G2735LS-30 but differs in physical package construction. The series is engineered for robust performance in demanding radar environments, offering a balance of power density and operational stability.

Replacement Considerations

The BLS6G2735LS-30 serves as a direct alternative within the same product family. Designers must account for the package difference, as the LS variant uses an earless flanged ceramic package (SOT1135B) compared to the standard flanged package (SOT1135A) of the BLS6G2735L-30.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) is rated at 60 V.

Does the device support continuous wave (CW) operation?

The datasheet specifies typical RF performance under pulsed conditions (tp = 300 µs). Thermal characteristics are provided for pulsed operation, indicating suitability for pulsed radar applications rather than CW.

How does the device handle load mismatches?

The transistor is designed to withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.