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The BLS6G2735LS-30 is a 30 W LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 3.5 GHz. It features an internally matched design within an earless flanged ceramic package (SOT1135B). Key electrical parameters include a drain-source voltage of 60 V, a breakdown voltage of 65 V, and a junction temperature limit of 225 °C. In pulsed RF operation at 32 V with a 50 mA quiescent current, it delivers 30 W output power with 13 dB gain and 50% drain efficiency.
Verify the specific ordering suffix against official Ampleon documentation to confirm the package variant. The LS designation indicates the earless flanged ceramic package (SOT1135B), which differs from the standard L version. Ensure compatibility with RoHS Directive 2002/95/EC requirements during procurement.
Select this component for broadband S-band radar systems requiring high thermal stability and ruggedness. Verify that the application circuit supports the specified pulsed RF conditions, including a 32 V supply and 50 mA quiescent current. Confirm impedance matching networks align with the provided source and load impedance data across the 2.7 GHz to 3.5 GHz band.
This device belongs to the BLS6G2735L series of S-band LDMOS transistors manufactured by Ampleon. The BLS6G2735LS-30 specifically utilizes the SOT1135B package outline, distinguishing it from the SOT1135A variant found in the BLS6G2735L-30 model. Both share identical electrical characteristics but differ in physical mounting configurations.
The BLS6G2735L-30 serves as a direct functional substitute, differing only in the package type (SOT1135A versus SOT1135B). Designers must account for the presence or absence of mounting ears when selecting between these two variants.