BLS6G3135-120,112

Overview

The BLS6G3135-120 is a 120 W LDMOS power transistor designed for S-Band radar applications in the 3.1 GHz to 3.5 GHz range. It operates with a drain-source voltage of 32 V and delivers an output power of 120 W, achieving a typical gain of 11 dB and drain efficiency of 43% under pulsed RF conditions (tp = 300 µs; δ = 10%). The device features a maximum drain-source breakdown voltage of 60 V and a junction temperature rating up to 225 °C. Packaged in the flanged ceramic SOT502A outline, it includes integrated ESD protection and is internally matched for simplified circuit integration.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Excellent ruggedness
• High efficiency

Applications

• S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range

Procurement Notes

Verify the specific package variant required for the design. The standard BLS6G3135-120 utilizes the SOT502A flanged ceramic package with two mounting holes and two leads. Confirm that the application environment supports the specified thermal management requirements, as the device relies on direct mounting base cooling for optimal performance.

Selection Notes

Select this component for high-power S-Band radar systems requiring robust performance at 32 V. Ensure the load impedance matches the typical values provided in the datasheet for the target frequency within the 3.1 GHz to 3.5 GHz band. Verify that the duty cycle and pulse width remain within the tested limits to maintain the specified efficiency and gain characteristics.

Part Context

This part belongs to Ampleon's LDMOS portfolio for radar transmitters. It is functionally related to the BLS6G3135S-120, which uses the SOT502B earless flanged package. Both variants share identical electrical specifications but differ in mechanical mounting configurations.

Replacement Considerations

The BLS6G3135S-120 serves as a direct functional substitute with identical electrical parameters, differing only in the SOT502B earless flanged package instead of the SOT502A.

FAQ

What is the maximum junction temperature for the BLS6G3135-120?

The maximum junction temperature (Tj) is rated at 225 °C.

Does the BLS6G3135-120 include internal matching?

Yes, the device is internally matched to facilitate easier circuit design and implementation.

What is the typical drain efficiency at 120 W output power?

The typical drain efficiency (ηD) is 43% when operating at 120 W output power with a supply voltage of 32 V.