BLS7G2325L-105,112

BLS7G2325L-105,112

$232.49
  • Description:RF MOSFET LDMOS 10V SOT502A
  • Series:-

SKU:58b5f0e66306 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 10V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray,Tray
  • Technology:LDMOS
  • Frequency:2.3GHz ~ 2.5GHz
  • Gain:18dB
  • Voltage - Test:10 V
  • Current Rating (Amps):5µA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:110W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLS7G2325L-105,112

Overview

The BLS7G2325L-105 is a 105 W LDMOS power transistor designed for S-band radar applications operating between 2300 MHz and 2500 MHz. It features an internally matched structure and integrated ESD protection within a flanged ceramic package (SOT502A). The device operates with a drain-source voltage of 28 V and a quiescent current of 900 mA, delivering typical average output power of 110 W in continuous wave mode with 55% drain efficiency. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a maximum junction temperature of 200 °C, and a thermal resistance from junction to case of 0.3 K/W.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Low Rth providing excellent thermal stability
  • Excellent ruggedness

Applications

  • RF power amplifiers for S-band radar applications in the 2300 MHz to 2500 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and compliance details. Ensure that the procurement channel provides valid traceability for the component. Confirm RoHS compliance status as stated in the product data sheet before finalizing orders.

Selection Notes

Select this component for S-band radar systems requiring high power output around 105 W. Verify that the application circuit can support the specified 28 V drain voltage and 900 mA quiescent current. Ensure the design accommodates the flanged ceramic package for proper heat dissipation given the 0.3 K/W thermal resistance specification.

Part Context

This part belongs to the BLS7G series of LDMOS power transistors manufactured by Ampleon. It is specifically engineered for robust performance in demanding RF environments. The device utilizes advanced silicon technology to achieve high efficiency and reliability in radar transmitter modules.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Do not assume compatibility with other LDMOS devices without verifying pinout, electrical parameters, and thermal characteristics against the original datasheet.

FAQ

What is the maximum load mismatch the device can withstand?

The BLS7G2325L-105 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified Class-AB operating conditions.

How is the gate connected in the package?

Pin 2 is the gate connection. Pin 1 is the drain, which is connected to the flange, and Pin 3 is the source.

Is this device suitable for automotive applications?

No, unless expressly stated otherwise in the data sheet, this product is not automotive qualified and is not suitable for automotive equipment or applications.

BLS7G2325L-105,112BLS7G2325L-105,112
$232.49
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