BLS7G2729LS-350P,1

Overview

The BLS7G2729LS-350P is a 350 W LDMOS power transistor designed for S-band radar applications operating between 2.7 GHz and 2.9 GHz. It features an internally matched earless flanged balanced ceramic package (SOT539B) with five leads. Key electrical parameters include a drain-source voltage of 65 V, a typical power gain of 13 dB, and a drain efficiency of 50% at 350 W output power. The device operates with a junction temperature limit of 225 °C and includes integrated ESD protection.

Feature Summary

• Internally matched for ease of use
• Excellent ruggedness with high load mismatch tolerance
• Integrated ESD protection
• High flexibility regarding pulse formats

Applications

• S-band radar systems in the 2.7 GHz to 2.9 GHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to confirm package variations. Ensure compliance with RoHS directives as stated in the product data sheet. Confirm that the component status remains active before initiating procurement processes.

Selection Notes

Select this component for high-power S-band radar transmitters requiring efficient pulsed operation. Consider the thermal impedance characteristics when designing heat dissipation solutions. Verify input and output impedance matching networks align with the provided typical impedance values for optimal performance.

Part Context

This part belongs to the BLS7G2729L(S)-350P series of LDMOS power transistors manufactured by Ampleon. The 'LS' variant specifically denotes the earless flanged balanced ceramic package (SOT539B), distinguishing it from the standard flanged version with mounting holes.

Replacement Considerations

Consult official substitution lists for compatible parts. Cross-reference pinouts and thermal characteristics carefully when considering alternative components.