BLS7G2730L-200PU

Overview

The BLS7G2730L-200PU is a 200 W LDMOS power transistor designed for S-band radar applications operating between 2700 MHz and 3000 MHz. It utilizes a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads. The device supports a drain-source voltage of 65 V and achieves a typical power gain of 12 dB at 200 W output. Drain efficiency reaches 48% under pulsed RF conditions, with a junction temperature limit of 225 °C.

Feature Summary

• High efficiency and excellent thermal stability
• Excellent ruggedness with integrated ESD protection
• Designed for broadband operation and easy power control
• Internally matched for ease of use

Applications

• S-band radar systems in the 2700 MHz to 3000 MHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package variations. Ensure compatibility with the required flanged balanced ceramic housing. Confirm RoHS compliance status through official channels before procurement.

Selection Notes

Select this component for high-power S-band radar transmitters requiring robust performance. Evaluate thermal management requirements given the 225 °C junction limit. Verify impedance matching networks align with the specified source and load impedances for optimal gain and efficiency.

Part Context

This part belongs to Ampleon's LDMOS power transistor portfolio optimized for radar frequencies. It shares design characteristics with other S-band devices but offers specific power handling capabilities suited for pulse modulation formats common in radar transmission systems.

Replacement Considerations

BLS7G2730LS-200P