BLS7G3135LS-200U

Overview

The BLS7G3135LS-200 is a 200 W LDMOS power transistor designed for S-band radar applications operating between 3100 MHz and 3500 MHz. It features an internally matched input and output for simplified integration. Key electrical parameters include a drain-source voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 2.34 S. At 32 V and 100 mA quiescent current, it delivers 200 W output power with 12 dB gain and up to 48% drain efficiency at 3100 MHz. The device utilizes a flanged ceramic SOT502B package with a junction temperature limit of 225 °C.

Feature Summary

• Internally matched input and output circuits facilitate ease of use in RF designs.
• High ruggedness capability allows operation under significant load mismatch conditions.
• Integrated electrostatic discharge (ESD) protection enhances component reliability.
• Excellent thermal stability supports high-power pulsed operations.

Applications

• S-band radar systems operating within the 3100 MHz to 3500 MHz frequency range.

Procurement Notes

Verify the specific revision status against the manufacturer's latest documentation before finalizing design specifications. Confirm that the SOT502B package dimensions align with the mechanical constraints of the intended mounting structure. Ensure proper ESD handling protocols are implemented during assembly to prevent damage to the sensitive internal circuitry.

Selection Notes

Select this component for applications requiring high power density in the S-band spectrum. Evaluate the thermal impedance characteristics relative to the expected pulse width and duty cycle to ensure the junction temperature remains within safe limits. Consider the internal matching network when designing surrounding passive components to optimize impedance matching across the specified bandwidth.

Part Context

This device belongs to the Ampleon BLS series of LDMOS power transistors specifically engineered for robust performance in radar environments. The SOT502B package provides a compact form factor suitable for space-constrained radar modules while maintaining effective heat dissipation through the flange connection.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing board layouts if considering alternative manufacturers or updated series revisions.

FAQ

What is the maximum load mismatch the device can withstand?

The BLS7G3135LS-200 can withstand a load mismatch corresponding to a Voltage Standing-Wave Ratio (VSWR) of 10:1 through all phases under specified test conditions.

How does the drain efficiency vary with frequency?

At 200 W output power, the typical drain efficiency is 48% at 3100 MHz, 46% at 3300 MHz, and 43% at 3500 MHz.

What is the recommended quiescent drain current for optimal performance?

The typical RF performance data is based on a quiescent drain current (IDq) of 100 mA in class-AB operation.