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The BLS9G2729LS-350U is a 350 W LDMOS power transistor designed for S-band applications operating between 2.7 GHz and 2.9 GHz. It features an internally matched design to simplify circuit integration. Typical RF performance at Tcase = 25 °C, pulsed RF conditions (tp = 300 µs, duty cycle = 10%), VDS = 28 V, and IDq = 400 mA includes a drain efficiency of 50%, power gain of 14 dB, and output power of 320 W. The device utilizes the SOT502B earless flanged ceramic package.
Verify that the ordering suffix 'U' corresponds to the specific tape-and-reel or packaging configuration defined by Ampleon, as the base datasheet specifies the standard SOT502B package without explicitly detailing the 'U' variant's physical handling characteristics. Confirm RoHS compliance status directly with the manufacturer or authorized distributor to ensure adherence to Directive 2002/95/EC requirements for the specific batch.
Select this component for high-power S-band radar transmitters requiring robust load mismatch tolerance. The device withstands a VSWR of 10:1 through all phases under specified pulsed conditions. Ensure the application design accommodates the required 28 V drain supply and manages heat dissipation effectively given the 350 W power rating and class-AB operation parameters.
This part belongs to the BLS9G27xx series of LDMOS power transistors from Ampleon. It shares the same electrical specifications and general description as the BLS9G2729L-350, differing primarily in the physical package configuration. While the 'L' variant uses the SOT502A flanged package with mounting holes, the 'LS' variant utilizes the SOT502B earless flanged ceramic package.
The BLS9G2729L-350 serves as the direct functional equivalent, sharing identical electrical performance and pinout definitions. Designers must account for the mechanical differences between the SOT502A and SOT502B packages when substituting components, specifically regarding mounting hole availability and board footprint dimensions.