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The BLS9G2731L-400U is a 400 W LDMOS power transistor designed for S-band applications operating between 2700 MHz and 3100 MHz. It features an internally matched design for ease of use and includes integrated dual-sided ESD protection to ensure excellent off-state isolation. The device exhibits high efficiency, reaching up to 47% drain efficiency at 425 W output power, with a typical power gain of 13 dB. It demonstrates excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases under pulsed conditions. The transistor is housed in a flanged ceramic package (SOT502A) with two mounting holes.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm package variations. The standard datasheet lists the BLS9G2731L-400 in SOT502A and the LS variant in SOT502B. Ensure the requested part number matches the required physical package configuration for your assembly process.
Select this component for S-band radar designs requiring high output power and internal matching. Verify that the application supports the specified pulsed operation parameters, including a duty cycle of 10% and pulse width of 300 µs, to maintain the rated performance metrics and junction temperature limits.
This device belongs to Ampleon's LDMOS S-band radar power transistor family. It shares core RF characteristics with the BLS9G2731LS-400, differing primarily in the physical package construction. The L-series utilizes a flanged ceramic package with mounting holes, while the LS-series uses an earless flanged design.
The BLS9G2731LS-400 serves as a direct functional substitute with identical electrical specifications. Selection depends on the mechanical requirement for mounting holes versus an earless flange design.