BLS9G2731L-400U

BLS9G2731L-400U

$223.88
  • Description:RF MOSFET LDMOS 32V SOT502A
  • Series:-

SKU:d21097ca054d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 32V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.7GHz ~ 3.1GHz
  • Gain:13dB
  • Voltage - Test:32 V
  • Current Rating (Amps):4µA
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:400W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLS9G2731L-400U

Overview

The BLS9G2731L-400U is a 400 W LDMOS power transistor designed for S-band applications operating between 2700 MHz and 3100 MHz. It features an internally matched design for ease of use and includes integrated dual-sided ESD protection to ensure excellent off-state isolation. The device exhibits high efficiency, reaching up to 47% drain efficiency at 425 W output power, with a typical power gain of 13 dB. It demonstrates excellent ruggedness, capable of withstanding a VSWR of 10:1 through all phases under pulsed conditions. The transistor is housed in a flanged ceramic package (SOT502A) with two mounting holes.

Feature Summary

  • Internally matched for simplified circuit integration
  • Integrated dual-sided ESD protection for superior off-state isolation
  • High ruggedness supporting load mismatch conditions
  • Excellent thermal stability and easy power control

Applications

  • S-band radar systems operating from 2700 MHz to 3100 MHz

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package variations. The standard datasheet lists the BLS9G2731L-400 in SOT502A and the LS variant in SOT502B. Ensure the requested part number matches the required physical package configuration for your assembly process.

Selection Notes

Select this component for S-band radar designs requiring high output power and internal matching. Verify that the application supports the specified pulsed operation parameters, including a duty cycle of 10% and pulse width of 300 µs, to maintain the rated performance metrics and junction temperature limits.

Part Context

This device belongs to Ampleon's LDMOS S-band radar power transistor family. It shares core RF characteristics with the BLS9G2731LS-400, differing primarily in the physical package construction. The L-series utilizes a flanged ceramic package with mounting holes, while the LS-series uses an earless flanged design.

Replacement Considerations

The BLS9G2731LS-400 serves as a direct functional substitute with identical electrical specifications. Selection depends on the mechanical requirement for mounting holes versus an earless flange design.

BLS9G2731L-400UBLS9G2731L-400U
$223.88
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