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The BLS9G2731LS-400U is a 400 W LDMOS power transistor designed for S-band applications in the frequency range from 2700 MHz to 3100 MHz. It operates with a drain-source voltage of 32 V and delivers a typical output power of 425 W, achieving a power gain of 13 dB and a drain efficiency of 47%. The device features an earless flanged ceramic package (SOT502B) with two leads. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.5 V, and a maximum junction temperature of 225 °C.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variations and compliance status. Ensure that procurement channels provide valid traceability for this RF component. Confirm RoHS compliance requirements align with project specifications before finalizing orders.
Select this component for high-power S-band radar systems requiring robust performance within the 2700 MHz to 3100 MHz band. Consider the internal matching and thermal characteristics when designing the circuit layout. Evaluate the class-AB operation limits and pulse format flexibility to ensure compatibility with the intended signal processing architecture.
This part belongs to the BLS9G2731L(S)-400 series of LDMOS power transistors manufactured by Ampleon. The LS variant specifically denotes the earless flanged ceramic package (SOT502B), distinguishing it from the standard flanged version with mounting holes. These devices are engineered for demanding radar environments requiring high reliability and efficiency.
Direct substitutes within the same family include the BLS9G2731L-400, which utilizes the SOT502A package with mounting holes. Verify mechanical footprint compatibility and lead configuration differences when considering alternative package versions within the product line.