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The Ampleon BLS9G2735LS-50U is a single-ended 50 W LDMOS power transistor designed for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. It operates with a drain-source voltage of 32 V and delivers a typical power gain of 12 dB at an output power of 50 W, achieving a drain efficiency of 48%. The device features internal matching for ease of use and is housed in an earless flanged ceramic package (SOT1135B). It exhibits excellent ruggedness, capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases under specified pulsed RF conditions.
Verify the specific ordering suffix against official documentation to confirm physical package variations or compliance certifications. Ensure that the procurement channel provides valid traceability for this sensitive semiconductor component. Confirm that the delivered units match the exact part number specifications required for your design implementation.
Select this component for designs requiring high power density in a compact form factor within the S-band spectrum. Consider the internal matching capabilities to reduce external component count. Evaluate the thermal management requirements based on the transient thermal impedance data provided in the datasheet for your specific duty cycle and pulse width constraints.
This device belongs to the BLS9G series of LDMOS power transistors manufactured by Ampleon. It shares architectural similarities with the BLS9G2735L-50 but utilizes the SOT1135B earless flanged ceramic package instead of the standard flanged version. This family is engineered specifically for robust performance in demanding radar transmitter modules.
The BLS9G2735L-50 serves as a direct functional alternative, differing primarily in its SOT1135A package configuration which includes mounting holes. Designers must account for mechanical footprint differences when substituting between these two variants.