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The BLS9G2934LS-400 is a single-ended LDMOS power transistor designed for S-band radar applications operating between 2.9 GHz and 3.4 GHz. It delivers 400 W output power with 11 dB gain and 43% drain efficiency at VDS = 32 V. The device features a 65 V drain-source breakdown voltage, 60 mΩ on-state resistance, and a junction temperature limit of +225 °C. Packaged in the earless flanged ceramic SOT502B format, it integrates dual-sided ESD protection and internal matching to facilitate implementation in high-power pulsed radar systems.
Verify the specific package variant against design requirements. The LS suffix indicates the SOT502B earless flanged ceramic package, which differs from the standard SOT502A version. Confirm RoHS compliance status and ensure handling procedures meet CDM Class 2A and HBM Class 2 electrostatic discharge sensitivity standards during assembly.
Select this component for S-band radar designs requiring high power density and ruggedness. Ensure the application supports the specified 32 V drain supply and 400 mA quiescent current. Verify that the host system can manage the thermal impedance characteristics and that the input/output impedances align with the provided typical values for the target frequency within the 2.9 GHz to 3.4 GHz band.
This part belongs to Ampleon's LDMOS S-band radar power transistor family. It shares core electrical specifications with the BLS9G2934L-400 but utilizes the SOT502B earless flanged ceramic package instead of the SOT502A flanged package with mounting holes. Both variants are optimized for high-efficiency pulsed operation in demanding radar environments.
The BLS9G2934L-400 serves as a direct functional substitute, differing only in the physical package configuration (SOT502A vs. SOT502B). Designers must verify mechanical fit and mounting hole availability when swapping between these two package versions.