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The BLS9G3135L-400U is a 400 W LDMOS power transistor designed for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz. It operates with a drain-source voltage of 65 V and features an integrated dual-sided ESD protection mechanism that ensures excellent off-state isolation. The device utilizes a flanged ceramic package (SOT502A) with two mounting holes and two leads, facilitating screw mount installation. Typical performance at Tcase = 25 °C includes a power gain of 11 dB, drain efficiency of 43%, and output power of 400 W under pulsed RF conditions.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variations, such as the presence or absence of ears on the flange. Ensure compliance with electrostatic discharge handling protocols during procurement and storage, as the component requires adherence to ANSI/ESD S20.20 standards to prevent damage.
Select this component for S-band radar systems requiring high power output within the 3.1 GHz to 3.5 GHz spectrum. Consider the internal matching and thermal characteristics when designing class-AB production circuits. Verify impedance data for specific frequencies to ensure proper load and source matching network design.
This part belongs to the BLS9G3135L(S)-400 series of LDMOS S-band radar power transistors manufactured by Ampleon. The series includes variants like the BLS9G3135LS-400, which differs primarily in the physical package configuration while maintaining similar electrical specifications for radar applications.
Consult official Ampleon documentation for confirmed substitute part numbers. Cross-referencing should be limited to verified equivalents listed in manufacturer catalogs to ensure compatibility with existing circuit designs.