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The BLS9G3135LS-115U is an LDMOS power transistor designed for S-band radar applications operating between 3.1 GHz and 3.5 GHz. It delivers a typical output power of 115 W with a drain efficiency of 49% at VDS = 32 V and IDq = 200 mA. The device features a maximum drain-source voltage of 65 V, a junction temperature rating up to 225 °C, and an on-state resistance of 0.12 Ω. Packaged in the earless flanged ceramic SOT1135B outline, it integrates dual-sided ESD protection and internal matching for broadband impedance compatibility.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status directly via official product details before procurement. Ensure handling procedures strictly follow ESD sensitivity guidelines specified in the datasheet to prevent device degradation during assembly.
Select this component for S-band radar designs requiring high output power and robust load immunity. Verify that the application circuit maintains the recommended class-AB bias conditions (VDS = 32 V, IDq = 200 mA) to achieve specified gain and efficiency metrics. Ensure the PCB layout utilizes Rogers 4360G2 material as referenced in the test circuit information for optimal RF performance.
This part belongs to the BLS9G3135L(S)-115 family of LDMOS transistors manufactured by Ampleon. The 'LS' designation specifically indicates the SOT1135B earless flanged ceramic package variant, distinct from the standard flanged SOT1135A version. Both variants share identical electrical characteristics and are intended for the same radar applications.
The BLS9G3135L-115 serves as the primary alternative within the same family, differing only in the SOT1135A flanged package configuration. No other cross-model substitutes are documented in the provided data sheet.