SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLS9G3135LS-400U is a 400 W LDMOS power transistor designed for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz. It operates with a drain-source voltage of 65 V and features an integrated dual-sided ESD protection structure that enables excellent off-state isolation. The device utilizes an internally matched design for ease of use and offers high flexibility regarding pulse formats. It is housed in an earless flanged ceramic package (SOT502B) and complies with RoHS directives.
Verify the specific ordering suffix against official Ampleon documentation before procurement, as suffixes may indicate variations in packaging or testing criteria. Confirm compliance with Directive 2002/95/EC regarding Restriction of Hazardous Substances. Ensure handling procedures adhere to ANSI/ESD S20.20 standards due to the device's sensitivity to electrostatic discharge.
Select this component for S-band radar systems requiring high output power within the 3.1 GHz to 3.5 GHz range. Consider the internal matching for simplified circuit design and the robust load mismatch capability up to VSWR = 10:1. Evaluate thermal management requirements based on the specified junction temperature limits and transient thermal impedance characteristics.
This part belongs to the BLS9G3135L(S)-400 series of LDMOS S-band radar power transistors manufactured by Ampleon. The 'LS' designation indicates the earless flanged ceramic package variant (SOT502B), distinguishing it from the standard flanged version (SOT502A). Both variants share identical electrical specifications and are optimized for pulsed RF operations in radar environments.
The BLS9G3135L-400 serves as the primary alternative within the same product family, differing only in its flanged ceramic package configuration (SOT502A) compared to the earless SOT502B package of the LS variant.