BLU9H0408L-800PU

Overview

The BLU9H0408L-800P is an LDMOS power transistor designed for UHF radar applications within the 400 MHz to 800 MHz frequency range. It delivers up to 800 W output power with high efficiency and gain. Key electrical parameters include a drain-source voltage of 108 V, gate-source threshold voltage of 2.2 V typ, and input capacitance of 368 pF. Thermal resistance from junction to case is 0.13 K/W at Tcase = 80°C. The device operates in Class-AB pulsed mode with IDq of 1300 mA and VDS of 50 V.

Feature Summary

• Designed for broadband operation in UHF radar applications
• Integrated dual-sided ESD protection
• Excellent ruggedness and stability

Applications

• RF power amplifiers for UHF radar applications in the 400 MHz to 800 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current catalog to ensure correct package version and compliance status. Confirm that the requested part matches the SOT539A flanged balanced ceramic package specification. Check for any recent revision updates or superseding documents before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high power density in the UHF band. Ensure the thermal management system can maintain the junction temperature below 225°C. Verify that the load impedance matches the required operating conditions for optimal efficiency and gain performance in Class-AB pulsed modes.

Part Context

This device belongs to Ampleon's portfolio of UHF power LDMOS transistors. It is specifically engineered for robust performance in radar systems. The product utilizes a flanged balanced ceramic package to facilitate efficient heat dissipation and reliable mounting in high-power RF amplifier modules.

Replacement Considerations

Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, thermal characteristics, and electrical specifications against the original datasheet.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) is rated at 108 V.

Is the device suitable for continuous wave operation?

The datasheet specifies performance under pulsed CW conditions (tp = 100µs; δ = 10%). Continuous use at maximum temperature affects reliability.

What is the ESD sensitivity classification?

The device has a Charged Device Model (CDM) classification of C2A and a Human Body Model (HBM) classification of 2.