BPS9G2933X-450Z

Overview

The Ampleon BPS9G2933X-450 is a GEN9 LDMOS power module designed for S-band radar applications operating between 2.9 GHz and 3.3 GHz. It delivers 450 W pulsed RF power with a typical drain efficiency of 43% at VDS = 32 V, IDq = 400 mA, and PL = 450 W. The device features excellent ruggedness, supporting a VSWR of 10:1 through all phases. Key electrical parameters include a power gain of 12 dB, input return loss of 8 dB, and rise/fall times of 650 ns. The module measures 5.5 x 3.5 cm, weighs 85 g, and utilizes a silver-plated base plate for thermal stability.

Feature Summary

• High ruggedness capability withstanding VSWR up to 10:1 in class-AB operation
• Silver-plated base plate ensuring excellent thermal stability
• Optimized for high flexibility regarding pulse formats
• Compliant with RoHS Directive 2002/95/EC

Applications

• S-band radar systems operating within the 2.9 GHz to 3.3 GHz frequency range

Procurement Notes

Verify the specific revision status against the latest Ampleon documentation before design finalization. Confirm that the application environment remains within the specified absolute maximum ratings, particularly junction temperature limits. Ensure proper ESD handling protocols are followed during installation, as the component is classified as C2A under Charged Device Model standards. Validate thermal management solutions against the provided transient thermal impedance data.

Selection Notes

Select this module for S-band radar designs requiring 450 W pulsed output power. Ensure the system can provide a 32 V drain supply and appropriate gate biasing. Verify that the load mismatch conditions do not exceed the 10:1 VSWR rating. Consider the physical dimensions and mounting hole configuration when designing the chassis. Evaluate thermal dissipation requirements based on the 43% typical drain efficiency at full power.

Part Context

This component belongs to Ampleon's ninth-generation (GEN9) LDMOS product line. It serves as a solid-state power amplifier module specifically engineered for high-power radar transmitters. The technology replaces older vacuum tube or discrete transistor solutions, offering improved reliability and integration in a compact pallet package suitable for defense and aerospace radar platforms.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the source material.