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BSC0303LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is TRENCH >=100V PG-TDSON-8. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC0303LSATMA1
- Description：TRENCH >=100V PG-TDSON-8
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 34A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：4900 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC0303LSATMA1
Single FETs, MOSFETs Overview
The BSC0303LSATMA1 is an N-channel OptiMOS™ 3 power transistor with a 120 V drain-source voltage rating. It features a maximum on-resistance of 12 mΩ at VGS=10V and supports a continuous drain current of 68 A at 25°C case temperature. The device operates up to 150°C junction temperature and includes an internal body diode. Key electrical parameters include a total gate charge of 51 nC, output charge of 51 nC, and pulsed drain current capability of 274 A.
Single FETs, MOSFETs Feature Summary
- Logic-level N-channel architecture optimized for low on-resistance
- 100% avalanche tested for robustness in inductive switching applications
- Designed for high-frequency switching and synchronous rectification
- Halogen-free and lead-plating compliant construction
Single FETs, MOSFETs Applications
- High-frequency DC-DC converters
- Synchronous rectification circuits
- Power supply modules
- Motor control systems
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code BSC0303LSATMA1 against official Infineon documentation to confirm package type PG-TDSON-8 and marking '0303LS'. Ensure compatibility with JEDEC standard validation requirements. Confirm RoHS compliance status prior to integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring 120 V blocking capability with low conduction losses. Consider the thermal resistance values (RthJC 0.64 °C/W) for heat dissipation planning. Evaluate the gate charge characteristics for driver compatibility in high-speed switching environments.
Single FETs, MOSFETs Part Context
This part belongs to the OptiMOS™ 3 family of power transistors from Infineon Technologies. It utilizes advanced trench technology to achieve excellent figure-of-merit performance. The SuperSO8/PG-TDSON-8 package provides efficient thermal management for surface-mount assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official cross-reference data for direct replacements. Verify pinout compatibility and thermal characteristics when substituting similar 120 V N-channel MOSFETs.
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