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BSC050NE2LSATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 25V 39A/58A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC050NE2LSATMA1
- Description：MOSFET N-CH 25V 39A/58A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：39A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：760 pF @ 12 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 28W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC050NE2LSATMA1
Single FETs, MOSFETs Overview
The BSC050NE2LSATMA1 is an N-channel OptiMOS™ Power-MOSFET with a 25 V drain-source voltage rating. It features a maximum on-resistance of 5.0 mΩ at VGS=4.5V and supports a continuous drain current of 58 A at TC=25°C. The device includes monolithically integrated reverse diodes, offering a forward voltage of 0.89 V at 30 A. Key dynamic parameters include a total gate charge of 10.4 nC at VGS=10V and a turn-on delay time of 2.5 ns. Thermal resistance from junction to case is 4.5 K/W, while the junction-to-ambient resistance on a standard PCB is 50 K/W.
Single FETs, MOSFETs Feature Summary
- Optimized for high-performance buck converter applications
- Very low on-resistance at logic-level gate drive voltages
- Superior thermal resistance characteristics
- 100% avalanche tested for robustness
Single FETs, MOSFETs Applications
- High-performance DC/DC buck converters
- Synchronous rectification in power supplies
- Low-voltage motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering code suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure that the component's operating temperature range and thermal management requirements align with the target system design constraints before finalizing procurement.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring low conduction losses at 25 V with efficient logic-level driving. Consider the thermal resistance values when designing heat dissipation strategies. Evaluate the gate charge requirements against the driver capabilities to ensure optimal switching performance in the intended circuit topology.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon OptiMOS™ family of power MOSFETs, specifically designed for low-voltage, high-current applications. The PG-TDSON-8 package provides a compact footprint suitable for surface-mount assembly, balancing electrical performance with thermal efficiency in space-constrained designs.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference guides or datasheets for verified substitutes. Ensure any replacement matches the 25 V rating, package dimensions, and thermal characteristics.
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