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BSC057N03LSGATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 17A/71A TDSON. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSC057N03LSGATMA1
- Description：MOSFET N-CH 30V 17A/71A TDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：17A (Ta), 71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：5.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id：2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2400 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta), 45W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TDSON-8-5
- Package / Case：8-PowerTDFN
Single FETs, MOSFETs datasheet and documents for BSC057N03LSGATMA1
Single FETs, MOSFETs Overview
The BSC057N03LS G is an N-channel OptiMOS™3 Power-MOSFET in a PG-TDSON-8 package. It features a drain-source voltage of 30 V and a continuous drain current of 71 A at Tc=25°C. The maximum on-resistance is 5.7 mΩ at Vgs=10 V and 8.5 mΩ at Vgs=4.5 V. Gate threshold voltage ranges from 1 V to 2.2 V, with total gate charge up to 30 nC. Power dissipation reaches 45 W at Tc=25°C. Operating temperature spans -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- Logic level operation for direct drive compatibility
- Avalanche rated capability for robustness
- Optimized technology for DC/DC converters
- Superior thermal resistance characteristics
Single FETs, MOSFETs Applications
- Switching Mode Power Supplies (SMPS)
- DC/DC converter circuits
- Synchronous rectification applications
Single FETs, MOSFETs Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel configuration. Confirm that the component meets RoHS compliance and halogen-free standards as specified by IEC61249-2-21. Ensure the procurement channel provides valid Infineon traceability documentation for quality assurance purposes.
Single FETs, MOSFETs Selection Notes
Select this device for low-voltage applications requiring high current handling within a compact surface-mount footprint. Evaluate the trade-off between the low on-resistance and the gate charge requirements for switching frequency optimization. Consider the thermal management capabilities provided by the bottom and top cooling paths in the TDSON-8 package.
Single FETs, MOSFETs Part Context
This component belongs to the OptiMOS™3 family designed for power efficiency. It utilizes silicon technology to deliver enhanced performance in synchronous rectification roles. The PG-TDSON-8 package facilitates efficient heat dissipation through both the bottom and top surfaces, supporting high-power density designs.
Single FETs, MOSFETs Replacement Considerations
Cross-reference with other OptiMOS™3 variants such as BSC050N03LS G or BSC030N03LSGATMA1 if different voltage or current ratings are needed. Verify pinout compatibility and thermal resistance specifications before substituting.
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