BSC072N03LDGATMA1

Overview

The BSC072N03LDGATMA1 is a dual N-channel enhancement mode MOSFET from the OptiMOS 3 series, housed in a PG-TDSON-8 surface-mount package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 20 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 7.2 mΩ at VGS=10 V and 9.4 mΩ at VGS=4.5 V. Operating within a junction temperature range of -55 °C to +150 °C, it includes an integrated body diode with a forward current rating of 20 A.

Feature Summary

• Dual N-channel configuration for efficient half-bridge or synchronous rectification topologies
• Logic-level gate drive capability enabling direct control by standard logic interfaces
• Optimized technology designed specifically for high-efficiency DC/DC converters
• Superior thermal resistance characteristics supporting high power density applications

Applications

• Synchronous rectification in point-of-load (POL) DC/DC converters
• Low-side switching in AC/DC power supply units
• High-frequency switching circuits in telecommunications infrastructure
• Battery management systems requiring low conduction losses

Procurement Notes

Verify the complete part number including the ATMA1 suffix against official Infineon documentation to ensure correct tape-and-reel packaging specifications. Confirm that the PG-TDSON-8 footprint matches your PCB design guidelines. Cross-reference the datasheet revision to validate electrical parameters before finalizing procurement orders.

Selection Notes

Select this component when a compact dual-N channel solution is required for 30 V logic-level applications. Evaluate the trade-off between the 7.2 mΩ on-resistance and the package's thermal dissipation capabilities. Ensure the gate drive voltage meets the minimum threshold requirements for optimal RDS(on) performance in your specific circuit topology.

Part Context

This component belongs to the OptiMOS 3 family, representing Infineon's advanced power transistor technology. It utilizes silicon planar trench gate technology to achieve low on-resistance and fast switching speeds. The dual configuration allows for space-saving designs in applications where two independent N-channel switches are needed within a single small outline package.

Replacement Considerations

Direct replacements must match the PG-TDSON-8 package, 30 V rating, and dual N-channel configuration. Verify that alternative parts meet the same logic-level gate drive requirements and thermal resistance specifications to maintain system performance without redesigning the PCB layout.

FAQ

Is the BSC072N03LDGATMA1 suitable for logic-level driving?

Yes, it is a logic-level MOSFET with a guaranteed maximum gate threshold voltage of 2.2 V, allowing it to be driven directly by standard logic signals.

What is the maximum pulsed drain current for this device?

The maximum pulsed drain current is rated at 80 A under steady-state conditions at a case temperature of 25 °C.

Does the device support avalanche operation?

Yes, the datasheet specifies that the device is 100% avalanche tested and provides single-pulse avalanche energy ratings.