BSC0923NDIATMA1

BSC0923NDIATMA1

$1.45
  • Description:MOSFET 2N-CH 30V 17A/32A TISON8
  • Series:OptiMOS™

SKU:cddeb9998cb2 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET 2N-CH 30V 17A/32A TISON8
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 N-Channel (Dual) Asymmetrical
  • FET Feature:Logic Level Gate, 4.5V Drive
  • Drain to Source Voltage (Vdss):30V
  • Current - Continuous Drain (Id) @ 25°C:17A, 32A
  • Rds On (Max) @ Id, Vgs:5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:1160pF @ 15V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TISON-8
  • Grade:-
  • Qualification:-

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BSC0923NDIATMA1

Overview

The BSC0923NDIATMA1 is a dual N-channel OptiMOS™ MOSFET designed for high-performance buck converters. It features logic-level operation rated at 4.5V and includes monolithic Schottky-like diodes. The device utilizes PG-TISON-8 packaging and is qualified according to JEDEC standards. Key electrical parameters include a drain-source breakdown voltage of 30V, continuous drain current up to 40A, and maximum on-state resistance of 7.0mΩ at VGS=10V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

  • Optimized for high-performance buck converter applications
  • Logic level gate drive capability rated at 4.5V
  • Integrated monolithic Schottky-like diodes
  • 100% avalanche tested for reliability

Applications

  • High-performance Buck converters
  • DC/DC power conversion modules
  • Automotive electronics systems

Procurement Notes

Verify the component against official Infineon datasheets to confirm technical specifications and package integrity. Ensure compatibility with target circuit requirements regarding thermal management and voltage ratings. Confirm that the ordering suffix matches the required tape-and-reel configuration for automated assembly processes.

Selection Notes

Select this component for designs requiring low gate charge and fast switching speeds in compact footprints. The logic-level threshold simplifies driver interface requirements. Evaluate thermal performance based on specific PCB copper area constraints, as power dissipation varies significantly between minimum footprint and standard cooling configurations.

Part Context

This part belongs to the OptiMOS™ family of power MOSFETs from Infineon Technologies. It represents a dual-channel configuration integrating two N-channel devices into a single package. The technology focuses on minimizing conduction losses while maintaining robust switching characteristics suitable for modern power supply architectures.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-reference pinouts and electrical limits before implementation.

FAQ

Is the BSC0923NDIATMA1 qualified for automotive applications?

Yes, the device is qualified according to JEDEC standards for target applications, which typically include automotive environments.

What is the maximum operating junction temperature?

The maximum operating and storage temperature range extends up to +150°C.

Does the component include integrated diodes?

Yes, it features monolithically integrated Schottky-like diodes for each channel.

BSC0923NDIATMA1BSC0923NDIATMA1
$1.45
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