BSC094N03S G

Single FETs, MOSFETs Overview

The BSC094N03S G is an N-channel Power MOSFET from Infineon's OptiMOS family, housed in a SuperSO8 5x6 package. It features a maximum drain-source voltage of 30 V and a continuous drain current of 10 A at 25°C. The device exhibits a maximum on-resistance of 9.4 mΩ at 10 V gate drive and 13.4 mΩ at 4.5 V. It supports logic-level control with a threshold voltage range of 1.1 V to 2.3 V. Key electrical parameters include a total power dissipation of 36 W, a junction-to-case thermal resistance of 3.5 K/W, and a typical gate charge of 7 nC at 4.5 V.

Single FETs, MOSFETs Feature Summary

• Logic level compatible for direct microcontroller interfacing
• Monolithically integrated Schottky-like diode
• Avalanche rated for robust operation

Single FETs, MOSFETs Applications

• Synchronous rectification in DC-DC converters
• Low-side switching in automotive systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' indicates RoHS compliance when sourcing. Confirm the package designation matches SuperSO8 5x6 requirements for your PCB layout. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability. Check for any recent lifecycle status updates or obsolescence notices directly from Infineon before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance in a compact surface-mount footprint. The logic-level gate drive capability simplifies driver circuit design. Evaluate thermal performance based on the specified junction-to-case resistance and expected ambient conditions. Consider the integrated body diode characteristics if used in synchronous rectification topologies.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS portfolio, designed for efficient power switching. The SuperSO8 package offers high power density and improved thermal performance compared to standard SOIC packages. It is engineered for cost-effective solutions in consumer and industrial electronics where space constraints are critical.

Single FETs, MOSFETs Replacement Considerations

Direct pin-compatible replacements within the same voltage and current rating should be verified against datasheet parameters. Ensure substitute components match the SuperSO8 5x6 package dimensions and thermal characteristics. Cross-reference gate charge and on-resistance values to maintain system efficiency.