BSD223PH6327XTSA1

Overview

The BSD223PH6327XTSA1 is a dual P-channel enhancement-mode MOSFET from Infineon's OptiMOS-P series. It features a -20 V drain-source breakdown voltage and a continuous drain current of -0.39 A at 25°C. The device offers a low on-state resistance of 1.2 Ω at -4.5 V gate drive, supporting super logic level operation. Packaged in a PG-SOT-363 surface-mount format, it operates within a temperature range of -55°C to +150°C and is qualified according to AEC-Q101 standards.

Feature Summary

• Dual P-channel configuration with independent switching capabilities
• Super Logic Level rated for efficient 2.5 V gate drive operation
• Avalanche energy rated for robust transient handling
• dv/dt rated for high-speed switching applications

Applications

• Low-side load switching in automotive electronics
• Power management circuits requiring compact dual-switching solutions
• General-purpose signal routing and isolation tasks

Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm packaging quantity and tape-and-reel specifications. Ensure component authenticity through authorized distribution channels. Cross-reference the datasheet revision number to validate electrical characteristics prior to final design integration.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage applications. The OptiMOS-P technology provides optimized on-resistance for improved efficiency. Verify that the -20 V rating aligns with system voltage requirements and that the SOT-363 package footprint fits the PCB layout constraints.

Part Context

This part belongs to Infineon's OptiMOS-P small-signal transistor family, designed for power-efficient switching. The BSD223P variant specifically integrates two P-channel MOSFETs into a single PG-SOT-363 package, offering space savings compared to discrete single-channel alternatives while maintaining high thermal performance.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains the dual P-channel topology, PG-SOT-363 package dimensions, and equivalent or superior electrical ratings for voltage, current, and on-resistance.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is +150°C.

Is the device suitable for automotive applications?

Yes, the component is qualified according to the AEC-Q101 standard.

How many channels are integrated in this package?

The device contains two independent P-channel MOSFETs.