BSH205,215

$0.20

Description：SMALL SIGNAL FIELD-EFFECT TRANSI
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:89c22f60cc74 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSH205,215 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is SMALL SIGNAL FIELD-EFFECT TRANSI. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSH205,215

Description：SMALL SIGNAL FIELD-EFFECT TRANSI
Series：-
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：12 V
Current - Continuous Drain (Id) @ 25°C：750mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：400mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：680mV @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs：3.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：200 pF @ 9.6 V
FET Feature：-
Power Dissipation (Max)：417mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23 (TO-236AB)
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSH205,215

BSH205,215

Single FETs, MOSFETs Overview

The Nexperia BSH205,215 is a P-channel enhancement mode MOSFET housed in an SOT-23 surface-mount package. It features a drain-source voltage of -12 V and a continuous DC drain current of -0.75 A at 25°C. The device exhibits a low on-state resistance of ≤ 0.5 Ω at VGS = -2.5 V and a typical gate threshold voltage of -0.68 V. Total gate charge is typically 3.8 nC, with a maximum power dissipation of 0.417 W at 25°C. Operating temperatures range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Logic level compatible operation suitable for battery-powered applications
Fast switching performance with extremely low threshold voltage
Subminiature SOT-23 surface mount package design

Single FETs, MOSFETs Applications

High speed digital interfacing
Battery powered equipment
Low side switching circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm exact packaging configuration. Confirm that the component matches the required electrical specifications for the target application environment. Ensure static protection protocols are followed during handling due to the sensitivity of the gate input structure.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel switch with logic-level drive compatibility is required. The low threshold voltage facilitates direct interfacing with standard logic outputs. Evaluate thermal derating requirements based on ambient temperature conditions to ensure safe operation within the specified power dissipation limits.

Single FETs, MOSFETs Part Context

This device belongs to the BSH series of small-signal MOS transistors designed for general-purpose switching. Originally developed under Philips Semiconductors, the product line was transferred to Nexperia. The BSH205 variant specifically targets applications requiring efficient control of low-current loads in space-constrained designs.