BSL207NH6327XTSA1

Overview

The BSL207NH6327XTSA1 is a dual N-channel enhancement-mode MOSFET from the OptiMOS™2 series, housed in a TSOP-6 surface-mount package. It features a drain-source voltage of 20 V and a continuous drain current of 2.1 A at 25 °C. The device has a maximum on-state resistance of 70 mΩ at VGS=4.5 V and 110 mΩ at VGS=2.5 V. Rated for avalanche energy operation, it supports a total power dissipation of 0.5 W and operates within a temperature range of -55 °C to 150 °C.

Feature Summary

• Dual N-channel configuration with super logic level capability rated for 2.5 V gate drive
• Avalanche rated for robustness against transient energy events
• Qualified according to AEC-Q101 automotive standards

Applications

• Low-side switching applications requiring high-speed response
• Logic-level interface circuits driven by 2.5 V or 4.5 V control signals
• Automotive electronic modules requiring AEC-Q101 qualified components

Procurement Notes

Verify the specific ordering suffix H6327 to confirm tape and reel packaging quantities. Ensure the component meets RoHS compliance and halogen-free requirements per IEC61249-2-21 standards before integration into final assemblies.

Selection Notes

Select this component when a dual N-channel solution is required in a compact TSOP-6 footprint. The low gate threshold voltage makes it suitable for direct interfacing with low-voltage logic controllers. Verify thermal management capabilities as power dissipation is limited to 0.5 W.

Part Context

This part belongs to Infineon's OptiMOS™2 family of small-signal transistors. These devices are designed for general-purpose switching applications where low on-resistance and fast switching speeds are prioritized. The dual configuration allows for space-efficient circuit designs compared to using discrete single-channel transistors.

Replacement Considerations

BSL207N