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BSL211SPT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 4.7A TSOP-6. Review the specifications below when checking this part for your BOM.
The BSL211SPT is a single-channel P-Channel MOSFET from Infineon Technologies, part of the OptiMOS P family. It utilizes silicon technology and is housed in a TSOP-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of -20 V and supports a continuous drain current (Id) of -4.7 A. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 94 mΩ at specified gate voltages, a gate threshold voltage (Vgs(th)) range centered around 900 mV, and a total gate charge (Qg) of 8.3 nC. It operates within an ambient temperature range of -55 °C to +150 °C with a power dissipation rating of 2 W.
Verify the specific suffix 'T' indicates tape-and-reel packaging configuration when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets prior to procurement. Ensure the component matches the exact part number BSL211SPT to guarantee correct electrical parameters and package type.
Select this component for applications requiring a -20 V P-Channel MOSFET with moderate current handling capabilities. The low gate charge facilitates efficient drive requirements. Verify that the thermal management design accommodates the 2 W power dissipation limit and that the operating voltage remains within the -20 V drain-source rating.
This component belongs to the OptiMOS P series, which focuses on p-channel power MOSFETs designed for efficiency and reliability. The TSOP-6 package provides a compact solution suitable for space-constrained designs. It serves as a discrete switching element within broader power electronics systems.
Cross-reference with other Infineon OptiMOS P devices in the TSOP-6 package. Verify pinout compatibility and ensure equivalent or superior electrical ratings for Vds, Id, and Rds(on) before substitution.
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