Single FETs, MOSFETs BSL211SPT product image

BSL211SPT

$0.16
  • Description:MOSFET P-CH 20V 4.7A TSOP-6
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)

SKU:ed15c9133140 Category: Brand:

  
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BSL211SPT is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 20V 4.7A TSOP-6. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSL211SPT

  • Description:MOSFET P-CH 20V 4.7A TSOP-6
  • Series:OptiMOS™
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:4.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:67mOhm @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id:1.2V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs:12.4 nC @ 4.5 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:654 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):2W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TSOP6-6
  • Package / Case:SOT-23-6 Thin, TSOT-23-6

Single FETs, MOSFETs datasheet and documents for BSL211SPT

BSL211SPT

Single FETs, MOSFETs Overview

The BSL211SPT is a single-channel P-Channel MOSFET from Infineon Technologies, part of the OptiMOS P family. It utilizes silicon technology and is housed in a TSOP-6 surface-mount package. The device features a drain-source breakdown voltage (Vds) of -20 V and supports a continuous drain current (Id) of -4.7 A. Key electrical characteristics include a maximum on-resistance (Rds(on)) of 94 mΩ at specified gate voltages, a gate threshold voltage (Vgs(th)) range centered around 900 mV, and a total gate charge (Qg) of 8.3 nC. It operates within an ambient temperature range of -55 °C to +150 °C with a power dissipation rating of 2 W.

Single FETs, MOSFETs Feature Summary

  • OptiMOS P technology integration for optimized switching performance
  • Enhancement mode operation with low gate threshold voltage
  • TSOP-6 compact surface-mount packaging

Single FETs, MOSFETs Applications

  • Low-side switching applications
  • Power management circuits
  • General-purpose transistor switching

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'T' indicates tape-and-reel packaging configuration when sourcing. Confirm RoHS compliance status through official manufacturer documentation or authorized distributor datasheets prior to procurement. Ensure the component matches the exact part number BSL211SPT to guarantee correct electrical parameters and package type.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a -20 V P-Channel MOSFET with moderate current handling capabilities. The low gate charge facilitates efficient drive requirements. Verify that the thermal management design accommodates the 2 W power dissipation limit and that the operating voltage remains within the -20 V drain-source rating.

Single FETs, MOSFETs Part Context

This component belongs to the OptiMOS P series, which focuses on p-channel power MOSFETs designed for efficiency and reliability. The TSOP-6 package provides a compact solution suitable for space-constrained designs. It serves as a discrete switching element within broader power electronics systems.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other Infineon OptiMOS P devices in the TSOP-6 package. Verify pinout compatibility and ensure equivalent or superior electrical ratings for Vds, Id, and Rds(on) before substitution.

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