BSM150GB170DN2HOSA1

Overview

The BSM150GB170DN2HOSA1 is a half-bridge IGBT power module manufactured by Infineon Technologies. It integrates two insulated gate bipolar transistors with fast free-wheeling diodes in a package featuring an insulated metal base plate. The device supports a collector-emitter voltage of 1700 V and a DC collector current of 220 A at a case temperature of 80 °C, or 150 A at 25 °C. Maximum ratings include a pulsed collector current of 440 A and a maximum junction temperature of 150 °C. Electrical characteristics specify a gate-emitter voltage limit of ±20 V and a typical static collector-emitter saturation voltage of 3.9 V at 150 A and 125 °C.

Feature Summary

• Half-bridge configuration integrating IGBTs and fast free-wheeling diodes
• Package design includes an insulated metal base plate for electrical isolation
• Capable of handling high collector currents up to 220 A under specified thermal conditions

Applications

• High-power industrial motor drives
• Medium-voltage variable frequency drives
• Uninterruptible power supply systems

Procurement Notes

Verify the specific ordering code C67070-A2704-A67 against official Infineon documentation to confirm availability and exact specifications. Ensure that the HOSA1 suffix aligns with your required component version, as datasheet information may vary between manufacturing batches. Cross-reference technical parameters with the latest manufacturer release notes before finalizing procurement orders.

Selection Notes

Select this module based on its 1700 V blocking capability and 220 A continuous current rating. Evaluate thermal management requirements using the provided transient thermal impedance curves to ensure the junction temperature remains within the 150 °C limit. Confirm that the switching characteristics match the intended operating frequency and load conditions for optimal efficiency.

Part Context

This component belongs to the BSM series of IGBT power modules from Infineon Technologies. The series is designed for robust performance in demanding power electronics applications. The DN2 designation typically indicates specific internal cell technology optimized for switching speed and conduction losses within the 1700 V voltage class.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing circuit designs before considering alternative components.