BSM300D12P4G101

$402.24

Description：MOSFET 2N-CH 1200V 291A MODULE
Series：-

SKU:72f87d5ec635 Category: FET, MOSFET Arrays Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 1200V 291A MODULE
Series：-
Mfr：Rohm Semiconductor
Package：Box
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：291A (Tc)
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：4.8V @ 145.6mA
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：30000pF @ 10V
Power - Max：925W (Tc)
Operating Temperature：175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：Module
Grade：-
Qualification：-

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BSM300D12P4G101

Overview

The BSM300D12P4G101 is a half-bridge SiC power module by ROHM Semiconductor, utilizing SiC UMOSFET technology. It features a 1200V drain-source voltage and a continuous drain current of 291A at Tc=60°C. The device supports a maximum junction temperature of 175°C with a total power dissipation of 925W. Electrical characteristics include a typical turn-on delay of 63ns, rise time of 45ns, turn-off delay of 270ns, and fall time of 57ns. The module measures 152.0mm x 62.0mm with a thickness of 18.0mm.

Feature Summary

Low surge and low switching loss capabilities
High-speed switching performance
Reduced temperature dependence

Applications

Motor drive systems
Inverter and converter circuits
Photovoltaic and wind power generation
Induction heating equipment

Procurement Notes

Verify the latest specifications directly with ROHM before implementation, as datasheet information is subject to change without notice. Confirm RoHS compliance status through official sales channels. Ensure mounting torque adheres to the specified 4.5 N·m for main terminals to maintain thermal interface integrity and electrical safety standards.

Selection Notes

Select this component for applications requiring high-frequency operation due to its fast switching times. Consider the 175°C max junction temperature for thermal management design. Verify that the gate drive circuit accommodates the specified VGS range of -4V to +21V. Account for the 162°C/kW junction-to-case thermal resistance when designing heat sink solutions.

Part Context

This model belongs to the BSM series of full SiC power modules from ROHM. It integrates SiC SBD and MOSFETs in a single package. The G-type designation indicates specific packaging and pinout configurations within the series. It is designed for industrial power conversion rather than automotive traction use.

Replacement Considerations

Consult ROHM for direct replacements or updated generations within the BSM series. Cross-model substitution requires verification of pin compatibility, thermal resistance values, and electrical ratings against the original application requirements.

FAQ

What is the maximum junction temperature for the BSM300D12P4G101?

The maximum operating junction temperature (Tjmax) is 175°C.

Is this module suitable for automotive traction inverters?

No, this product is not recommended for use in automotive equipment or applications requiring extremely high reliability such as transportation equipment.