BSM400D12P2G003

Overview

The BSM400D12P2G003 is a silicon carbide (SiC) power module manufactured by ROHM Semiconductor. It features a dual N-Channel half-bridge configuration integrating SiC DMOSFET and SiC-SBD components. The device supports a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 400 A at case temperature. Key electrical parameters include a gate-source voltage range of -4 V to +21 V, a threshold voltage of 4.8 V, and a power dissipation capacity of 2450 W. Operating temperatures span from -40 C to +150 C. Switching characteristics include a fall time of 75 ns, rise time of unspecified in primary data but implied fast switching, typical turn-on delay of 60 ns, and typical turn-off delay of 240 ns. The module utilizes screw mount installation within a bulk package.

Feature Summary

• Integrates SiC DMOSFET and SiC-SBD for high-efficiency half-bridge operation
• Dual N-Channel configuration optimized for high-power density applications
• Capable of handling high continuous current with robust thermal performance

Applications

• Motor drive systems
• Inverter circuits
• Converter topologies
• Photovoltaic inverters
• Wind power generation systems

Procurement Notes

Verify the specific manufacturing lot and RoHS compliance status directly with the supplier or manufacturer before procurement. Ensure that the ordering suffix matches the exact required specification variant. Confirm that the receiving facility has appropriate handling procedures for sensitive semiconductor modules. Cross-reference the datasheet revision date with the production batch to ensure technical consistency. Validate that the intended application environment falls within the specified operating temperature and voltage limits defined in the official documentation.

Selection Notes

Select this component when designing systems requiring high-frequency switching with minimal conduction losses. The 1200V rating suits medium-voltage industrial applications. Consider the 400A current capability for heavy-load scenarios. Evaluate thermal management requirements based on the 2450W dissipation rating. Compare against other ROHM SiC modules if higher current or different packaging is needed. Ensure gate driver compatibility with the specified voltage levels.

Part Context

This part belongs to ROHM's BSM series of Silicon Carbide Power Modules. These modules are designed to replace traditional silicon IGBTs in high-performance applications. The series offers improved efficiency and reduced system size due to faster switching speeds. The BSM400D12P2G003 represents a mid-range current option within the 1200V family, balancing power density and thermal resilience for demanding industrial environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. Users should consult ROHM Semiconductor directly for qualified alternatives or pin-compatible replacements suitable for their specific design constraints.