ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2N-CH 1200V 400A MODULE
- Series：-
- Mfr：Rohm Semiconductor
- Package：Bulk
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：400A (Tc)
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：5.6V @ 109.2mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：17000pF @ 10V
- Power - Max：1570W (Tc)
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Grade：-
- Qualification：-
Download product information
Overview
The BSM400D12P3G002 is a full silicon carbide (SiC) power module manufactured by ROHM Semiconductor. It features a G-type half-bridge package with dimensions of 152.0 x 62.0 mm and a thickness of 18.0 mm. The device supports a drain-source voltage of 1200 V and a continuous drain current of 358 A. Total power dissipation is rated at 1570 W, with a maximum junction temperature of 175 °C. Storage temperatures range from -40 °C to 125 °C. The module utilizes corrugated cardboard packaging with a quantity of four units per independent package.
Feature Summary
- Low surge capability combined with low switching loss for efficient operation.
- Enables high-speed switching performance.
- Reduced temperature dependence for stable thermal behavior.
Applications
- Evaluation using the BSMGD3G12D24-EVK001 gate driver board for third/fourth generation SiC-MOSFETs in G and E type housings.
Procurement Notes
This component is designated as not recommended for new designs. Production continues solely to support existing customers. New design sales are restricted. Verify supply status and lead times directly with authorized distributors or the manufacturer before procurement planning.
Selection Notes
Select this module only for legacy system maintenance or replacement of existing ROHM G-type SiC modules. Ensure compatibility with the 152.0 x 62.0 mm footprint and 18.0 mm height. Confirm that the 1200 V rating and 358 A current capacity meet the specific circuit requirements without requiring derating beyond standard operational limits.
Part Context
The BSM400D12P3G002 belongs to ROHM's full SiC power module lineup, specifically utilizing G-type housing. It is part of a series including variants like the BSM600D12P3. These modules integrate SiC MOSFET technology designed for high-efficiency power conversion applications requiring robust thermal and electrical performance.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. As this model is not recommended for new designs, alternative selection should focus on current ROHM SiC modules with compatible G-type packaging and similar electrical ratings.
