BSM50GD120DLCBPSA1

Description：LOW POWER ECONO AG-ECONO2A-211
Series：-

SKU:af5c4ba92087 Category: IGBT Modules Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：LOW POWER ECONO AG-ECONO2A-211
Series：-
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：Full Bridge Inverter
Vce(on) (Max) @ Vge, Ic：2.6V @ 15V, 50A
Input：Standard
NTC Thermistor：No
Operating Temperature：150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-ECONO2A
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：85 A
Power - Max：350 W
Current - Collector Cutoff (Max)：84 µA
Input Capacitance (Cies) @ Vce：3.3 nF @ 25 V

Download product information

BSM50GD120DLCBPSA1

Overview

The BSM50GD120DLCBPSA1 is a full bridge inverter IGBT module manufactured by Infineon Technologies. It features an AG-ECONO2A package and chassis mount configuration. The device supports a collector-emitter voltage of 1200 V with a maximum continuous collector current of 85 A. Power dissipation is rated at 350 W, and the collector cutoff current is 84 µA. Input capacitance is specified as 3.3 nF at 25°C.

Feature Summary

Full bridge inverter topology for power conversion applications
AG-ECONO2A compact module packaging design
Chassis mounting style for thermal management

Applications

Industrial motor drives
Power supply inverters
AC drive systems

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet revisions match specific production batches. Check for obsolescence status as availability may be limited. Ensure storage conditions comply with semiconductor handling standards to prevent moisture damage prior to soldering.

Selection Notes

Evaluate thermal resistance requirements against system heat sink capabilities. Verify gate drive voltage compatibility with the module specifications. Consider physical dimensions for chassis integration. Assess switching frequency limitations relative to application performance needs.

Part Context

This component belongs to Infineon's IGBT module portfolio utilizing silicon technology. It is designed for medium-power industrial applications requiring robust switching characteristics. The AG-ECONO2A series offers a balance between power density and ease of integration into larger power electronics assemblies.