BSO104N03S

Description：MOSFET N-CH 30V 10A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)

SKU:19c7d613bca4 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSO104N03S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 30V 10A 8DSO. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSO104N03S

Description：MOSFET N-CH 30V 10A 8DSO
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9.7mOhm @ 13A, 10V
Vgs(th) (Max) @ Id：2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs：16 nC @ 5 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2130 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.56W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-DSO-8
Package / Case：8-SOIC (0.154", 3.90mm Width)

Single FETs, MOSFETs datasheet and documents for BSO104N03S

BSO104N03S

Single FETs, MOSFETs Overview

The BSO104N03S is an N-channel OptiMOS™ 2 power transistor designed for fast switching applications. It features a 30 V drain-source breakdown voltage and a continuous drain current of 13 A at 25 °C. The device offers a maximum on-resistance of 9.7 mΩ at VGS=10 V and 13.6 mΩ at VGS=4.5 V. Total gate charge is typically 16 nC. It operates within a temperature range of -55 °C to +150 °C and is housed in a PG-DSO-8 package.

Single FETs, MOSFETs Feature Summary

Optimized technology specifically engineered for notebook DC/DC converters
Logic level compatible with low-voltage drive requirements
Avalanche rated capability for robust operation under transient conditions

Single FETs, MOSFETs Applications

Switching mode power supplies (SMPS)
Notebook DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the component status as this specific part number may be discontinued or subject to limited availability. Confirm that the PG-DSO-8 package footprint matches your PCB design constraints. Ensure thermal management strategies align with the specified junction-to-ambient resistance values for your intended operating environment.

Single FETs, MOSFETs Selection Notes

Select this component when designing compact power stages requiring logic-level gate drive compatibility. Consider its avalanche rating for circuits prone to inductive load switching. Evaluate the trade-off between its low on-resistance and total gate charge to optimize efficiency in high-frequency switching applications typical of portable electronics.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS™ 2 family, which focuses on balancing conduction losses and switching performance. It utilizes advanced planar trench technology to achieve superior thermal resistance compared to standard MOSFETs. The PG-DSO-8 package provides a compact solution suitable for space-constrained mobile computing platforms.