BSO4804HUMA2

Overview

The BSO4804HUMA2 is a dual N-channel MOSFET array manufactured by Infineon Technologies, designed for surface-mount applications in the PG-DSO-8 package. It features a drain-source voltage rating of 30V and a continuous drain current of 8A at ambient temperature. The device delivers a maximum on-resistance of 48mΩ with a power dissipation capacity of 2W. Operating within a temperature range from -55°C to +150°C, it utilizes enhancement mode technology. Key electrical characteristics include a gate-source voltage limit of ±20V and a threshold voltage typically around 2V, ensuring reliable switching performance for low-voltage power management tasks.

Feature Summary

• Dual N-channel configuration integrated into a single compact surface-mount package
• Optimized low on-resistance for efficient power handling in space-constrained designs
• Extended operating temperature range supporting harsh environmental conditions

Applications

• Embedded systems requiring isolated or paired high-side/low-side switching
• Industrial automation control circuits needing robust power distribution
• Motor driver interfaces utilizing complementary or parallel channel arrangements

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm datasheet revisions match design requirements. Check for moisture sensitivity levels and reflow soldering profiles specific to the PG-DSO-8 package. Ensure supply chain integrity to avoid counterfeit components affecting long-term reliability.

Selection Notes

Select this component when dual N-channel isolation or synchronized switching is required in a small footprint. Consider the 48mΩ on-resistance against thermal constraints in the 2W dissipation limit. Evaluate the 30V rating against system voltage spikes. Compare gate charge requirements with driver capabilities to ensure adequate switching speed without excessive losses.

Part Context

This part belongs to Infineon's MOSFET array family, distinct from single-channel devices like the BSO040N03MS G or smart switches like the BTS70802EPAXUMA1. Unlike the GaN-based BSO064N03S, it uses silicon technology optimized for cost-effective dual-channel integration rather than ultra-fast switching speeds.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Cross-reference with other dual N-channel MOSFET arrays in the PG-DSO-8 package if sourcing is restricted, ensuring pinout compatibility and electrical parameter equivalence.