BSO615CT

$0.33

Description：MOSFET N/P-CH 60V 3.1A/2A 8DSO
Series：SIPMOS®

SKU:820c06a9568b Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 60V 3.1A/2A 8DSO
Series：SIPMOS®
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：60V
Current - Continuous Drain (Id) @ 25°C：3.1A, 2A
Rds On (Max) @ Id, Vgs：110mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs：22.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：380pF @ 25V
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：PG-DSO-8
Grade：-
Qualification：-

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BSO615CT

Overview

The BSO615CT is a SIPMOS dual N- and P-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of ±60 V, continuous drain currents of 3.1 A (N) and -2 A (P), and on-state resistances of 0.11 Ω (N) and 0.3 Ω (P). The device supports logic-level operation, avalanche energy ratings up to 70 mJ, and dv/dt ratings of 6 kV/µs. Operating temperatures range from -55 °C to +150 °C with a maximum power dissipation of 2 W.

Feature Summary

Dual N- and P-channel configuration within a single component
Logic level gate drive capability for direct microcontroller interfacing
Rated for avalanche energy and high dv/dt switching performance

Applications

High-side and low-side switching circuits
Motor driver bridge configurations
Power distribution units

Procurement Notes

Verify the specific ordering code Q67041-S4024 against current Infineon databases to confirm availability status. Ensure the SO-8 footprint matches the design requirements. Check for any updated datasheet revisions that may supersede the preliminary data provided.

Selection Notes

Select this component for applications requiring complementary N/P channel switching in a compact surface-mount form factor. Consider the thermal resistance values when designing PCB copper areas for adequate heat dissipation at elevated ambient temperatures.

Part Context

This part belongs to the Infineon SIPMOS small-signal transistor series. It utilizes standard silicon planar technology optimized for general-purpose switching applications. The dual-channel design simplifies bill-of-materials management compared to using separate discrete transistors.