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BSP149L6906HTSA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 200V 660MA SOT223-4. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP149L6906HTSA1
- Description：MOSFET N-CH 200V 660MA SOT223-4
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- FET Type：N-Channel, Depletion Mode
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：660mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
- Rds On (Max) @ Id, Vgs：1.8Ohm @ 660mA, 10V
- Vgs(th) (Max) @ Id：1V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 5 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：430 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT223-4-21
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP149L6906HTSA1
Single FETs, MOSFETs Overview
The BSP149L6906HTSA1 is an N-channel depletion mode SIPMOS small-signal transistor manufactured by Infineon Technologies. It operates with a drain-source voltage of 200 V and a continuous drain current of 0.66 A at 25 °C. The device features a maximum on-state resistance of 3.5 Ω and a reverse diode dv/dt rating of 6 kV/µs. It is housed in a PG-SOT223 package and qualified to AEC-Q101 standards.
Single FETs, MOSFETs Feature Summary
- Depletion mode operation for normally-on applications
- High dv/dt rated capability for fast switching environments
- AEC-Q101 automotive qualification
- Threshold voltage sorted into specific bands
Single FETs, MOSFETs Applications
- Automotive load switching
- Industrial power control
- Motor drive circuits
Single FETs, MOSFETs Procurement Notes
Verify the ordering suffix L6906HTSA1 against official Infineon documentation to confirm the specific threshold voltage band and tape-and-reel packaging configuration. Ensure compatibility with existing PCB footprints for the PG-SOT223 package before finalizing procurement plans.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring a normally-on N-channel MOSFET with high breakdown voltage. Consider the sorted threshold voltage bands for precise gate drive requirements. Evaluate thermal management needs based on the specified junction-to-soldering point thermal resistance.
Single FETs, MOSFETs Part Context
This part belongs to the BSP149 series of SIPMOS small-signal transistors. These devices are designed for robust performance in demanding electronic applications, offering reliable switching capabilities within a compact surface-mount package suitable for automated assembly processes.
Single FETs, MOSFETs Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the depletion mode characteristic, PG-SOT223 package dimensions, and AEC-Q101 qualification status.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
