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BSP320SH6433XTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 2.9A SOT223. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSP320SH6433XTMA1
- Description：MOSFET N-CH 60V 2.9A SOT223
- Series：SIPMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.9A (Tj)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：120mOhm @ 2.9A, 10V
- Vgs(th) (Max) @ Id：4V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs：9.3 nC @ 7 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：340 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-223
- Package / Case：TO-261-4, TO-261AA
Single FETs, MOSFETs datasheet and documents for BSP320SH6433XTMA1
Single FETs, MOSFETs Overview
The BSP320SH6433XTMA1 is an N-channel small-signal MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 60 V and a continuous drain current of 2.9 A. The device exhibits a maximum on-resistance of 120 mOhms at a gate-source voltage of 10 V. It is housed in a SOT-23-3 surface-mount package with a power dissipation rating of 500 mW. The component operates within a temperature range of -55 °C to +150 °C.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode operation for low-side switching applications
- Low on-resistance characteristic for efficient power handling
- High thermal stability suitable for demanding environments
Single FETs, MOSFETs Applications
- General-purpose low-side switching
- Load control circuits
- Power management modules
Single FETs, MOSFETs Procurement Notes
This component is classified as End of Life (EOL) and is scheduled for discontinuation by the manufacturer. Verification of final purchase orders should be conducted directly with authorized distributors or the manufacturer to confirm availability status. Alternative sourcing strategies must be evaluated immediately due to the obsolescence notification. Supply chain continuity requires proactive replacement planning.
Single FETs, MOSFETs Selection Notes
Engineers should prioritize alternative components from the same family or compatible series that remain in active production. Selection criteria must include matching electrical parameters such as voltage ratings, current capacity, and package dimensions. Compatibility with existing PCB footprints and thermal management requirements should be validated before finalizing any substitute part number to ensure design integrity.
Single FETs, MOSFETs Part Context
This part belongs to Infineon's SIPMOS small-signal MOSFET portfolio, designed for general-purpose switching tasks. The H6433 suffix indicates specific tape-and-reel packaging configuration. As a discrete semiconductor device, it serves as a fundamental building block in electronic circuits requiring reliable transistor switching capabilities under standard operating conditions.
Single FETs, MOSFETs Replacement Considerations
Publicly confirmed substitutes include the NDT3055 from onsemi. Engineers must verify pinout compatibility and electrical specifications when transitioning to this alternative component.
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