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BSS123 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists UMW. Its product description is MOSFET N-CH 100V 170MA SOT23. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123
- Description：MOSFET N-CH 100V 170MA SOT23
- Series：*
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for BSS123
Single FETs, MOSFETs Overview
The UMW BSS123 is an N-channel enhancement mode MOSFET housed in a SOT-23 package. It features a drain-source breakdown voltage of 100V and a continuous drain current of 0.17A at VGS=10V. The device exhibits low on-resistance, with RDS(ON) values of 6Ω at VGS=10V and 10Ω at VGS=4.5V. It includes ESD protection rated at 2kV HBM and offers fast switching capabilities suitable for various electronic applications.
Single FETs, MOSFETs Feature Summary
- N-channel enhancement mode construction
- Integrated electrostatic discharge protection
- Fast switching performance
Single FETs, MOSFETs Applications
- Low voltage power management circuits
- Load switch implementations
- General purpose switching applications
Single FETs, MOSFETs Procurement Notes
Verify the component marking code 'SA' to confirm authenticity from UMT Semiconductor. Ensure the ordering code matches the standard tape and reel configuration. Confirm compliance with RoHS directives before integration into final assemblies.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high voltage tolerance in a compact surface mount footprint. The low gate threshold voltage facilitates compatibility with logic-level drivers. Evaluate thermal dissipation requirements against the specified junction temperature limits during operation.
Single FETs, MOSFETs Part Context
This part belongs to the UMW discrete semiconductor portfolio, specifically within the N-channel MOSFET category. It serves as a solution for compact circuit designs where space efficiency and reliable switching are prioritized over high current handling capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. Cross-reference pinouts and electrical ratings carefully when considering alternative components.
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