BSS123/LF1R

Description：MOSFET N-CH 100V 150MA TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:80eebdf102d4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

BSS123/LF1R is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is MOSFET N-CH 100V 150MA TO236AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123/LF1R

Description：MOSFET N-CH 100V 150MA TO236AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：6Ohm @ 120mA, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：40 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：250mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-236AB
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123/LF1R

BSS123/LF1R

Single FETs, MOSFETs Overview

The Nexperia BSS123/LF1R is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS technology. It operates with a drain-source voltage of 100 V and a continuous drain current of 150 mA at 25 °C. The device features a low on-state resistance of 6 Ω maximum at VGS = 10 V. Packaged in the SOT23 subminiature surface-mount envelope, it supports junction temperatures up to 150 °C and includes thermal resistance data for FR4 board mounting.

Single FETs, MOSFETs Feature Summary

TrenchMOS technology enables extremely fast switching performance
Logic level compatible for direct interface with standard logic circuits
Subminiature SOT23 package designed for efficient surface mounting

Single FETs, MOSFETs Applications

Relay driver circuits
High-speed line drivers
Telephone ringer applications

Single FETs, MOSFETs Procurement Notes

Verify the specific LF1R suffix against official Nexperia documentation to confirm exact tape-and-reel specifications or marking codes. Ensure the source document matches the requested part number variant before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage isolation in compact spaces. The logic-level compatibility simplifies drive circuitry, while the small SOT23 footprint aids in dense PCB layouts where space constraints are critical.

Single FETs, MOSFETs Part Context

This device belongs to the Nexperia discrete power MOSFET portfolio, originally developed under Philips Semiconductors. It represents the industry transition from legacy naming conventions to the current Nexperia brand identity established in 2017.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may differ in RDS(ON) or switching speeds; verify pinout compatibility with the original SOT23 configuration.