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BSS123Q-13 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is BSS FAMILY SOT23 T&R 10K. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for BSS123Q-13
- Description：BSS FAMILY SOT23 T&R 10K
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：6Ohm @ 170mA, 10V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：60 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
Single FETs, MOSFETs datasheet and documents for BSS123Q-13
Single FETs, MOSFETs Overview
The BSS123Q-13 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage rating of 100 V and a continuous drain current of 0.17 A at 25°C. The device exhibits a maximum on-resistance of 6 Ω at VGS = 10V and 10 Ω at VGS = 4.5V. It operates within a temperature range of -55°C to +150°C with a power dissipation capacity of 300 mW. Packaged in SOT23, it meets automotive qualification standards.
Single FETs, MOSFETs Feature Summary
- Qualified to AEC-Q101 standards for high reliability in automotive environments
- Capable of supporting PPAP requirements for specific change control
- Manufactured in IATF 16949 certified facilities
- Features low gate threshold voltage and fast switching speed
Single FETs, MOSFETs Applications
- Small Servo Motor Control
- Power MOSFET Gate Drivers
- Switching Applications
Single FETs, MOSFETs Procurement Notes
Verify the component matches the exact part number BSS123Q-13 to ensure correct packaging quantity of 10,000 units per tape and reel. Confirm that the supplier provides documentation verifying AEC-Q101 qualification and IATF 16949 manufacturing compliance. Check datasheet revision DS43455 Rev. 1-2 for accurate electrical specifications before integration into designs.
Single FETs, MOSFETs Selection Notes
Select this component for applications requiring robust automotive-grade performance with a 100 V drain-source voltage rating. Consider its low input capacitance and fast switching characteristics for efficient gate driving. Ensure the design accommodates the 300 mW power dissipation limit and the specified thermal resistance values under expected operating conditions.
Single FETs, MOSFETs Part Context
This part belongs to the BSS123Q family of N-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes advanced trench technology to minimize on-state resistance while providing reliable switching performance. The product is designed specifically for low voltage, low current applications demanding high durability and strict quality control standards.
Single FETs, MOSFETs Replacement Considerations
BSS123Q-7 is a compatible alternative offering identical electrical characteristics but packaged in quantities of 3,000 per tape and reel instead of 10,000.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
