BSS123TA

$0.40

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:55b7d2b02655 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

BSS123TA is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 100V 170MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSS123TA

Description：MOSFET N-CH 100V 170MA SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：170mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：20 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：360mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BSS123TA

BSS123TA

Single FETs, MOSFETs Overview

The BSS123TA is an N-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It utilizes advanced trench technology to minimize on-state resistance while providing rugged and fast switching performance. The device features a high drain-source voltage rating of 100V and a continuous drain current of 0.17A at +25°C ambient temperature. It operates within a junction temperature range of -55°C to +150°C and is housed in a SOT-23 surface-mount package.

Single FETs, MOSFETs Feature Summary

Low gate threshold voltage for efficient drive requirements
Fast switching speed suitable for dynamic applications
High reliability qualification meeting JEDEC standards

Single FETs, MOSFETs Applications

Small servo motor controls
Power MOSFET gate drivers
Switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation, as it dictates packaging quantity and carrier type. Confirm compliance with RoHS 3 and REACH directives if required by your manufacturing environment. Ensure the selected variant matches the intended assembly site and date code requirements for production traceability.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage, low-current circuit designs requiring reliable switching capabilities. Evaluate the thermal characteristics and power dissipation limits relative to the expected operating conditions. Consider the SOT-23 package dimensions for PCB layout constraints and ensure adequate pad layout recommendations are followed for optimal soldering results.

Single FETs, MOSFETs Part Context

This part belongs to the BSS123 family of N-channel enhancement mode MOSFETs produced using proprietary high-density trench technology. The TA suffix indicates a specific commercial grade configuration within the product line. An automotive-compliant version is available under the separate BSS123Q designation for specialized industrial or vehicular applications.