BSS131H6327XTSA1

Single FETs, MOSFETs Overview

The BSS131H6327XTSA1 is an N-channel enhancement mode MOSFET from the SIPMOS series, packaged in PG-SOT-23. It features a drain-source voltage of 240 V and a continuous drain current of 110 mA at 25°C ambient temperature. The device has a maximum on-state resistance of 14 Ω at Vgs=10V and 20 Ω at Vgs=4.5V. Power dissipation is rated at 360 mW at 25°C. Operating and storage temperatures range from -55°C to 150°C. Gate-source voltage limits are ±20 V.

Single FETs, MOSFETs Feature Summary

• Enhancement mode logic level operation
• dv/dt rated capability for high-speed switching
• Qualified according to AEC-Q101 automotive standards

Single FETs, MOSFETs Applications

• High-side load switches
• Logic level translation
• Power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix H6327XTSA1 against official Infineon documentation to confirm tape and reel packaging details. Ensure compliance with RoHS and halogen-free requirements as specified in the datasheet. Confirm that the component meets AEC-Q101 qualification if used in automotive applications. Cross-reference the marking code SRs for batch identification.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high voltage blocking capability in a small surface-mount package. Consider the relatively high on-state resistance when designing for low-current logic interfaces. Evaluate thermal performance based on the 350 K/W junction-to-ambient thermal resistance for minimal footprint designs. Verify gate drive voltage levels against the threshold characteristics for reliable switching.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon SIPMOS small-signal transistor family, designed for general-purpose switching applications. The PG-SOT-23 package provides a compact solution for space-constrained PCB layouts. The device integrates a body diode with defined reverse recovery characteristics suitable for synchronous rectification or freewheeling duties in low-power converters.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same SIPMOS series that offer lower Rds(on) or higher current ratings. Verify that any substitute maintains the 240 V breakdown voltage and AEC-Q101 qualification if required by the design.