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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 0.3A SOT23-6
- Series：-
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：300mA (Ta)
- Rds On (Max) @ Id, Vgs：2Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id：1.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：27pF @ 30V
- Power - Max：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-23-6
- Supplier Device Package：SOT-23-6
- Grade：-
- Qualification：-
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Overview
The UMW BSS138PS is a dual N-channel enhancement mode Field-Effect Transistor housed in an SOT23-6 surface-mount package. It utilizes Trench MOSFET technology to achieve low on-state resistance, with maximum values of 2Ω at VGS=10V and 2.2Ω at VGS=4.5V. The device supports a drain-source voltage of 60V and a continuous drain current of 0.3A at a junction temperature of 150°C. Key electrical characteristics include a gate threshold voltage of 1.6V typical, total gate charge of 17nC, and forward transconductance of 2S. Thermal performance is defined by a junction-to-ambient thermal resistance of 350°C/W.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs within a compact SOT23-6 plastic package.
- Trench MOSFET technology enables logic-level compatibility and fast switching speeds suitable for high-frequency applications.
- Low on-state resistance ensures efficient power handling across standard drive voltages.
Applications
- Notebook computer systems
- Load switch circuits
- Networking equipment
- Hand-held instruments
Procurement Notes
Verify the specific manufacturer designation when sourcing this component, as the BSS138PS part number is widely utilized by multiple semiconductor vendors including Nexperia and UMW. Confirm that the datasheet corresponds to UTD Semiconductor Co., Limited specifications regarding absolute maximum ratings and electrical parameters. Ensure the package type matches the required SOT23-6 footprint for PCB layout compatibility.
Selection Notes
Select this component for designs requiring dual N-channel switching in a minimal footprint. The low gate threshold voltage allows direct interfacing with standard logic levels. Evaluate the thermal resistance constraints for steady-state operation, particularly if operating near the maximum continuous drain current limit. Consider the package's power dissipation capabilities relative to the copper mounting pad area available on the target circuit board.
Part Context
This component belongs to the family of small-signal dual MOSFETs designed for portable electronics. The SOT23-6 package provides a space-efficient solution compared to discrete single-transistor implementations. It serves as a replacement for older technologies requiring dual N-channel functionality in limited board real estate.
Replacement Considerations
Direct substitutes include other manufacturers' versions of the BSS138PS such as those from Nexperia or Diodes Inc. Verify pinout compatibility and ensure that the alternative component meets the same 60V breakdown voltage and 0.3A current rating requirements.
