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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2A SOT23-3
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：80mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id：2V @ 11µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：500 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：500mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-SOT23
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The BSS308PEL6327HTSA1 is a single-channel P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It utilizes silicon technology and is housed in an SMD/SMT TSOP-6 package. The device features a drain-source breakdown voltage (Vds) of 30 V and supports a continuous drain current (Id) of 2 A. Key electrical parameters include a maximum on-resistance (Rds On) of 88 mOhms, a gate-source voltage range of ±20 V, and a threshold voltage (Vgs th) of 1.5 V. The total gate charge (Qg) is specified at 5 nC. Power dissipation is rated at 500 mW, with an operating temperature range from -55 °C to +150 °C.
Feature Summary
- Single-channel P-Channel configuration for efficient switching applications
- Low on-resistance characteristics optimized for signal integrity
- Enhanced thermal stability across wide industrial temperature ranges
Applications
- Small signal switching circuits
- Power management modules
- Battery protection systems
Procurement Notes
Verify the exact suffix L6327HTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with surface-mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before integration into regulated products.
Selection Notes
Select this component for designs requiring a compact P-Channel solution with moderate current handling capabilities. The TSOP-6 package offers space efficiency compared to larger footprints. Evaluate the 88 mOhm on-resistance against thermal constraints to ensure adequate heat dissipation within the 500 mW power limit during continuous operation.
Part Context
This part belongs to Infineon's small-signal MOSFET portfolio, designed for general-purpose switching tasks. It complements other devices in the series by providing a balanced trade-off between conduction losses and gate drive requirements. The specific numbering indicates a standardized automotive-grade variant suitable for reliable performance in demanding environments.
Replacement Considerations
Direct substitutes may include BSL308PEH6327XTSA1 or BSS308PEH6327, provided pinout and electrical ratings align with the design requirements. Verify package dimensions and thermal characteristics when cross-referencing alternative manufacturers' offerings.
