BSS806NH6327XTSA1

$0.28

Description：MOSFET N-CH 20V 2.3A SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:df28a78e456c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 20V 2.3A SOT23-3
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 2.5V
Rds On (Max) @ Id, Vgs：57mOhm @ 2.3A, 2.5V
Vgs(th) (Max) @ Id：750mV @ 11µA
Gate Charge (Qg) (Max) @ Vgs：1.7 nC @ 2.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：529 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-SOT23
Package / Case：TO-236-3, SC-59, SOT-23-3

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BSS806NH6327XTSA1

Overview

The BSS806NH6327XTSA1 is an N-channel enhancement mode MOSFET from the OptiMOS™ 2 series. It features a maximum drain-source voltage of 20 V and continuous drain current of 2.3 A at 25 °C. The device has a maximum on-state resistance of 57 mΩ at VGS=2.5 V and 82 mΩ at VGS=1.8 V. Total gate charge is 1.7 nC, with a threshold voltage range of 0.3 V to 0.75 V. Power dissipation is 0.5 W at 25 °C in a PG-SOT23 package.

Feature Summary

Ultra Logic level operation rated for 1.8 V gate drive
Avalanche rated capability for robust switching performance
Qualified according to AEC-Q101 automotive standards

Applications

Logic level switching applications
Automotive electronic circuits
Low voltage power management systems

Procurement Notes

Verify the complete part number including the H6327 suffix against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with surface mount assembly processes by checking soldering temperature limits and ESD handling requirements specified in the datasheet.

Selection Notes

Select this component when low gate drive voltage is required, specifically for logic levels around 1.8 V or 2.5 V. The small-signal SOT-23 package suits space-constrained designs. Verify that the 20 V breakdown voltage and 2.3 A current rating align with the specific circuit load requirements.

Part Context

This part belongs to the BSS806N family within Infineon's OptiMOS™ 2 portfolio. These are small-signal transistors designed for efficient switching in compact form factors. The technology focuses on minimizing gate charge and on-resistance for improved efficiency in low-voltage environments.

Replacement Considerations

Check for direct substitutes within the BSS806N family or other OptiMOS™ 2 variants. Confirm pinout compatibility and electrical parameter equivalence before substitution.