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Product Detailed Parameters
- Description：MOSFET 2P-CH 50V 0.13A SOT363
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：50V
- Current - Continuous Drain (Id) @ 25°C：130mA
- Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
- Vgs(th) (Max) @ Id：2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：45pF @ 25V
- Power - Max：300mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363
- Grade：-
- Qualification：-
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Overview
The BSS84DW-7-F is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -50V drain-source voltage (BVDSS) and a continuous drain current of -130mA at +25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 10Ω at VGS = -5V and ID = -0.1A, with a typical gate threshold voltage (VGS(th)) of -1.6V at ID = -1mA. Total power dissipation is rated at 300mW, supported by a thermal resistance from junction to ambient of 417°C/W. The component operates within a temperature range of -55°C to +150°C and utilizes an SOT363 package.
Feature Summary
- Dual P-channel configuration designed for high-efficiency power-management applications
- Low on-state resistance combined with fast switching speed capabilities
- Qualified to JEDEC standards for high reliability
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- General-purpose interfacing switches
- Power-management functions
- Analog switches
Procurement Notes
Verify the specific ordering suffix when purchasing. The official datasheet lists BSS84DW-7-F as the standard orderable part number in a 3,000-unit tape and reel carrier. Confirm that the requested variant matches the required packaging quantity and type before finalizing procurement orders.
Selection Notes
Select this component for designs requiring two isolated P-channel switches in a compact surface-mount footprint. Ensure the application logic aligns with the negative polarity requirements inherent to P-channel devices. Verify that the system's gate drive voltage meets the minimum threshold needed to achieve the specified low on-resistance values.
Part Context
This component belongs to the BSS84 family of dual P-channel MOSFETs produced by Diodes Incorporated. It shares core electrical characteristics with single-channel variants like the BSS84 but integrates two independent channels into a single SOT363 package. This integration supports space-constrained circuit board layouts while maintaining consistent performance metrics across both channels.
Replacement Considerations
An automotive-compliant version exists under the separate part number BSS84DWQ. Verify if the standard industrial-grade BSS84DW-7-F meets the environmental and reliability requirements of the target application before considering alternative substitutes.
FAQ
What is the maximum operating junction temperature for the BSS84DW?
The maximum operating junction temperature (TJ) for the BSS84DW is +150°C.
How is the BSS84DW packaged?
The BSS84DW is housed in a standard SOT363 package made of molded plastic with a UL flammability classification rating of 94V-0.
What are the dynamic capacitance values for this MOSFET?
The input capacitance (Ciss) is typically 45 pF, the output capacitance (Coss) is typically 25 pF, and the reverse transfer capacitance (Crss) is typically 12 pF.
