BSS84W-7

$0.49

Description：MOSFET P-CH 50V 130MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:dc0c8b7250b4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 50V 130MA SOT323
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：50 V
Current - Continuous Drain (Id) @ 25°C：130mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V
Rds On (Max) @ Id, Vgs：10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id：2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：45 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：200mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-323
Package / Case：SC-70, SOT-323

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BSS84W-7

Overview

The BSS84W-7-F is a single P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of -50V and a continuous drain current (Id) of -130mA at +25°C. The device exhibits a maximum static drain-source on-resistance (Rds(on)) of 10Ω at Vgs = -5V and Id = -0.1A, with a gate threshold voltage (Vgs(th)) ranging from -0.8V to -2.0V at Id = -1mA. Total power dissipation is rated at 200mW, supported by a thermal resistance junction-to-ambient of 625°C/W. Operating and storage temperatures span from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant
Qualified to JEDEC standards for high reliability

Applications

General purpose interfacing switches
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix against official documentation, as variations exist within the product family. Confirm that the required package type matches the SOT323 standard configuration. Ensure compliance with environmental directives such as RoHS 3 and REACH if applicable to your manufacturing region. Cross-reference the datasheet revision number to guarantee alignment with the most recent electrical characteristics and mechanical dimensions provided by the manufacturer.

Selection Notes

Select this component when designing circuits requiring a compact P-channel MOSFET with low on-resistance and fast switching capabilities. The SOT323 package is suitable for space-constrained surface mount applications. Evaluate the thermal performance based on the specified junction-to-ambient thermal resistance and ensure the operating temperature range meets the environmental requirements of the final system design.

Part Context

This part belongs to the BSS84 series of P-channel enhancement mode field effect transistors produced by Diodes Incorporated. The series is engineered to minimize on-state resistance while maintaining superior switching performance. The BSS84W variant specifically utilizes the SOT323 package, offering a compact solution for general-purpose interfacing and power management tasks in modern electronic designs.